High efficiency, aluminum gallium arsenide LED arrays utilizing

Details High efficiency, aluminum gallium arsenide LED arrays utilizing High efficiency, aluminum gallium arsenide LED arrays utilizing

1996-05-29

1998-09-01

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

257 88, 257 96, 257102, H01L 3300

Patent

active

058014047

ABSTRACT:
An AlGaAs-based light emitting diode array is disclosed wherein each individual pixel contains a Zn-stop diffusion layer of p-type conductivity to control the diffusion process.

REFERENCES:
patent: 5212705 (1993-05-01), Kahen et al.

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