Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1995-03-15
1997-03-25
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 95, H01L 3300
Patent
active
056147341
ABSTRACT:
An LED structure including a distributed Bragg reflector having multiple periods, each period including at least a first layer made of a first indirect band gap material and a second layer made of a second indirect band gap material, the first band gap material having a higher index of refraction than the second indirect band gap material; and a light emitting diode formed on top of the distributed Bragg reflector, the light emitting diode having a top layer and a bottom layer, the bottom layer being proximate to the distributed Bragg reflector.
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Meier Stephen
Yale University
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