High dynamic range pixel amplifier

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

Reexamination Certificate

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C257S225000, C257S239000

Reexamination Certificate

active

07091531

ABSTRACT:
A pixel cell with increased dynamic range is formed by providing a floating diffusion region having a variable capacitance, controlled by at least one gate having source and drain regions commonly connected to the floating diffusion region. The gate has an intrinsic capacitance which, when the gate is activated, is added to the capacitance of the floating diffusion region, providing a low conversion gain readout. When the gate is off, the floating diffusion region capacitance is minimized, providing a high conversion gain readout. The gate may also be selectively switched to mid-level. At mid-level, a mid-level conversion gain, which is between the high and low conversion gains, readout is provided, but the gate still provides some capacitance to prevent the floating diffusion region from saturating.

REFERENCES:
patent: 6310369 (2001-10-01), Narabu et al.
patent: 2004/0036784 (2004-02-01), Bock
patent: 2004/0223065 (2004-11-01), Takayanagi
patent: 2005/0012168 (2005-01-01), Hong
patent: 2005/0083421 (2005-04-01), Berezin et al.
patent: 2005/0092894 (2005-05-01), Fossum

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