Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-08-15
2006-08-15
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S225000, C257S239000
Reexamination Certificate
active
07091531
ABSTRACT:
A pixel cell with increased dynamic range is formed by providing a floating diffusion region having a variable capacitance, controlled by at least one gate having source and drain regions commonly connected to the floating diffusion region. The gate has an intrinsic capacitance which, when the gate is activated, is added to the capacitance of the floating diffusion region, providing a low conversion gain readout. When the gate is off, the floating diffusion region capacitance is minimized, providing a high conversion gain readout. The gate may also be selectively switched to mid-level. At mid-level, a mid-level conversion gain, which is between the high and low conversion gains, readout is provided, but the gate still provides some capacitance to prevent the floating diffusion region from saturating.
REFERENCES:
patent: 6310369 (2001-10-01), Narabu et al.
patent: 2004/0036784 (2004-02-01), Bock
patent: 2004/0223065 (2004-11-01), Takayanagi
patent: 2005/0012168 (2005-01-01), Hong
patent: 2005/0083421 (2005-04-01), Berezin et al.
patent: 2005/0092894 (2005-05-01), Fossum
Dickstein & Shapiro LLP
Prenty Mark V.
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