High dynamic range charge amplifier

Details High dynamic range charge amplifier High dynamic range charge amplifier

1984-11-28

1986-12-23

Miller, Stanley D.

Electrical pulse counters, pulse dividers, or shift registers: c

Charge transfer device

Particular input or output means

357 24, 377 62, 377 63, H03F 304

Patent

active

046317392

ABSTRACT:
A charge coupled device (CCD) amplifier is utilized for amplification of charge packets as small as 500 electrons into usable signals. Very little noise is injected into the signal. The charge amplifier consists of two connecting electrodes, one designated as the detector G.sub.1 and the other designated as the response G.sub.2, physically separated by any convenient distance on the same LSI chip surface on which an NMOS field effect transistor (FET) is attached. Also coupled to the FET is another electrode G.sub.3 designated as the amplifier gate. The charge amplifier structure is embedded in the silicon dioxide layer, with the detector response, and amplifier electrode being located some convenient distance above the silicon-silicon dioxide interface.

REFERENCES:
patent: 4047051 (1977-09-01), Heller
patent: 4246496 (1981-01-01), Heller
patent: 4272693 (1981-06-01), Meusburger
patent: 4302685 (1981-11-01), Hebenstreit
patent: 4349749 (1982-09-01), Pfleiderer et al.
patent: 4454435 (1984-06-01), Burns
patent: 4458324 (1984-07-01), Burke et al.
patent: 4486893 (1984-12-01), Carrison

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