High dielectric constant materials

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S239000, C438S253000

Reexamination Certificate

active

07316962

ABSTRACT:
A capacitor (10) includes a substrate (12) and two metal electrodes (14, 18). A dielectric layer (16) is formed between the electrodes. Preferably, the dielectric layer has a dielectric constant greater than 25 and an adequate conduction band offset with silicon. Exemplary embodiments proposed use the following material systems: HfuTivTawOxNy, HfuTivOxNy, TiuSrvOxNy, TiuAlvOxNyand HfuSrvOxNy(where u, v, w, x, and y are the atomic proportions of the elements in the dielectric stack).

REFERENCES:
patent: 4744861 (1988-05-01), Matsunaga et al.
patent: 4884123 (1989-11-01), Dixit et al.
patent: 5195018 (1993-03-01), Kwon et al.
patent: 5510173 (1996-04-01), Pass et al.
patent: 5523624 (1996-06-01), Chen et al.
patent: 6022798 (2000-02-01), Sumi et al.
patent: 6100187 (2000-08-01), Hintermaier et al.
patent: 6181498 (2001-01-01), Kikuchi et al.
patent: 6211544 (2001-04-01), Park et al.
patent: 6222218 (2001-04-01), Jammy et al.
patent: 6261917 (2001-07-01), Quek et al.
patent: 6383873 (2002-05-01), Hegde et al.
patent: 6407435 (2002-06-01), Ma et al.
patent: 6451664 (2002-09-01), Barth et al.
patent: 6485828 (2002-11-01), Agarwal
patent: 6518610 (2003-02-01), Yang et al.
patent: 6617206 (2003-09-01), Sandhu et al.
patent: 6640403 (2003-11-01), Shih et al.
patent: 6642131 (2003-11-01), Harada
patent: 6646298 (2003-11-01), Rhodes
patent: 6653676 (2003-11-01), Tsu et al.
patent: 6667669 (2003-12-01), Goyette et al.
patent: 6673668 (2004-01-01), Kim et al.
patent: 6734079 (2004-05-01), Huang et al.
patent: 6767795 (2004-07-01), Ahn et al.
patent: 6783997 (2004-08-01), Rotondaro et al.
patent: 6784100 (2004-08-01), Oh et al.
patent: 6787429 (2004-09-01), Lu et al.
patent: 6787831 (2004-09-01), Moon et al.
patent: 6794262 (2004-09-01), Ning et al.
patent: 6794705 (2004-09-01), Lian et al.
patent: 6797562 (2004-09-01), Bonart et al.
patent: 6812091 (2004-11-01), Gruening et al.
patent: 6828192 (2004-12-01), Gustin et al.
patent: 7064043 (2006-06-01), Rouse
patent: 7091548 (2006-08-01), Jeong et al.
patent: 2001/0039087 (2001-11-01), Jammy et al.
patent: 2002/0197789 (2002-12-01), Buchanan et al.
patent: 2003/0006480 (2003-01-01), Lian et al.
patent: 2003/0132469 (2003-07-01), Moon et al.
patent: 2003/0207532 (2003-11-01), Chudzik et al.
patent: 2004/0042155 (2004-03-01), Ritter et al.
patent: 2004/0043557 (2004-03-01), Haukka et al.
patent: 2004/0082126 (2004-04-01), Park et al.
patent: 2004/0097034 (2004-05-01), Sandhu et al.
patent: 2004/0104439 (2004-06-01), Haukka et al.
patent: 2004/0109280 (2004-06-01), Moon et al.
patent: 2004/0168627 (2004-09-01), Conley, Jr. et al.
patent: 2004/0171212 (2004-09-01), Won et al.
patent: 2004/0171280 (2004-09-01), Conley, Jr. et al.
patent: 2004/0224474 (2004-11-01), Berth et al.
patent: 2004/0238872 (2004-12-01), Lee et al.
patent: 2004/0262661 (2004-12-01), Kim et al.
patent: 2004/0262700 (2004-12-01), Ahn et al.
patent: 2004/0266217 (2004-12-01), Kim et al.
patent: 2005/0082586 (2005-04-01), Tu et al.
patent: 2005/0202659 (2005-09-01), Li et al.
patent: 2006/0088660 (2006-04-01), Putkonen et al.
patent: 2006/0131675 (2006-06-01), Wang et al.
patent: 2006/0261516 (2006-11-01), Kunitake et al.
patent: 1458692 (2003-11-01), None
patent: WO 99/31721 (1999-06-01), None
patent: WO-02/31875 (2002-04-01), None
patent: WO/2004/017377 (2004-02-01), None
Ng, Complete Guide to Semiconductor Devices, Second Edition, John Wiley & Sons: New York, 2002, p. 161.
Kim, H, et al., “Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition,” 2002 American Vacuum Society, J. Vac. Sci. Technol. A vol. 20, Issue 3, May/Jun. 2002, pp. 802-806.
Zhang, L. et al., “Effect of Pre-cooling Treatment on the Formation of C54 Phase Titanium Silicide,” Mat. Res. Soc. Symp. Proc. vol. 670, 2001 Materials Research Society, pp. K3.7.1-K3.7.5.
Palermo, V., et al., “Lateral diffusion of titanium disilicide as a route to contacting hybrid Si/organic nanostructures,” Applied Physics Letters, vol. 81, No. 19, Nov. 4, 2002, pp. 1-3.
Tsai W., et al., “Surface preparation and interfacial stability of high-k-dielectrics deposited by atomic layer chemical vapor deposition,” Microelectronic Engineering, vol. 65, 2002 Elsevier Science B. V., pp. 259-272.
Beyers, R., et al., “Metastable phase formation in titanium-silicon thin films,” J. Appl. Phys., vol. 57, No. 12, Jun. 15, 1985, pp. 5240-5245.
Robertson, J., “Band Structures and Band Offsets of High K Dielectrics on Si,” Applied Surface Science, vol. 190, 2002, pp. 2-10.
Ino, T., et al., “Dielectric Constant Behavior of Hf-O-N System,” Japanese Journal of Applied Physics, vol. 45, No. 4B, 2006, pp. 2908-2913.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High dielectric constant materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High dielectric constant materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High dielectric constant materials will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2798816

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.