Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2008-01-08
2008-01-08
Whitehead, Carl (Department: 2813)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S239000, C438S253000
Reexamination Certificate
active
07316962
ABSTRACT:
A capacitor (10) includes a substrate (12) and two metal electrodes (14, 18). A dielectric layer (16) is formed between the electrodes. Preferably, the dielectric layer has a dielectric constant greater than 25 and an adequate conduction band offset with silicon. Exemplary embodiments proposed use the following material systems: HfuTivTawOxNy, HfuTivOxNy, TiuSrvOxNy, TiuAlvOxNyand HfuSrvOxNy(where u, v, w, x, and y are the atomic proportions of the elements in the dielectric stack).
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Infineon - Technologies AG
Rodgers Colleen E.
Slater & Matsil L.L.P.
Whitehead Carl
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