Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1995-06-07
1997-08-12
Whitehead, Jr., Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257635, 257636, 257637, H01L 2358
Patent
active
056568525
ABSTRACT:
Generally, the present invention utilizes a lower electrode comprising a sidewall spacer to fore a top surface with rounded comers on which HDC material can be deposited without substantial cracking. An important aspect of the present invention is that the sidewall spacer does not reduce the electrical contact surface area between the lower electrode and the HDC material layer as compared to a similar structure containing a lower electrode without a sidewall spacer. One embodiment of the present invention is a microelectronic structure comprising a supporting layer (e.g. Si substrate 30) having a principal surface, a lower electrode overlying the principal surface of the supporting layer, and a high-dielectric-constant material layer (e.g. BST 44) overlying the top surface of the lower electrode. The lower electrode comprises an adhesion layer (e.g TiN 36), an unreactive layer (e.g. Pt 42), a sidewall spacer (e.g. SiO.sub.2 40) and a top surface, with the sidewall spacer causing the top surface to have a rounded corner. The rounded corner of the top surface minimizes crack formation in the high-dielectric-constant material, layer.
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Bhattacharya Pijush
Nishioka Yasushiro
Park Kyung-Ho
Summerfelt Scott R.
Carlson Brian
Donaldson Richard L.
Petersen Bret J.
Texas Instruments Incorporated
Whitehead Jr. Carl W.
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