High dielectric constant ceramic material and method of manufact

Details High dielectric constant ceramic material and method of manufact High dielectric constant ceramic material and method of manufact

1987-08-28

1988-08-30

Dixon, Jr., William R.

Compositions: ceramic

Ceramic compositions

Titanate, zirconate, stannate, niobate, or tantalate or...

501134, 501135, 501136, 501138, 501139, C04B 3546

Patent

active

047677325

ABSTRACT:
To obtain a ceramic material having a high dielectric constant (K=2300 to 7000), a high insulation resistance (CR=4000 to 18000 ohmF), a low temperature dependence (.+-.10%) to (.+-.22, -33%) upon dielectric constant over a wide temperature range (-55 and +125.degree. C.) and a relatively low sintering temperature (1000.degree. C. to 1250.degree. C.), BaTiO.sub.3 powder at least 50 wt % of which is 0.7 to 3 .mu.m in particle size) is mixed with another compound with perovskite structure mainly composed of oxides of Pb, Ba, Sr, Zn, Nb, Mg and Ti before sintering. Further, part of Ti of BaTiO.sub.3 is substitutable with Zr or Sn, and part of Ba of BaTiO.sub.3 is substitutable with Sr, Ca or Ce.

REFERENCES:
patent: 2563307 (1951-08-01), Burnham et al.
patent: 4500942 (1985-02-01), Wilson
Japanese Journal of Applied Physics, Col. 24 (1985, Supplement 24-2, pp. 427-429.

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