High dielectric constant capacitor and a fabricating method ther

Details High dielectric constant capacitor and a fabricating method ther High dielectric constant capacitor and a fabricating method ther

1996-07-30

1997-11-11

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170

Patent

active

056863390

ABSTRACT:
A method for fabricating a capacitor of a semiconductor device, includes the steps of: forming a first insulating layer and then a second insulating layer on the first insulating layer; removing the second insulating layer of a first electrode region of a capacitor; forming a side wall at a side of the second insulating layer; etching the first insulating layer by using the side wall of the second insulating layer as a mask so as to form a contact hole; forming a first electrode of a capacitor on the side wall and on the contact hole; forming a dielectric layer on the first electrode of the capacitor; and forming a second electrode of the capacitor on the dielectric layer. And, a capacitor in a semiconductor device includes: a substrate; a first insulating layer being formed at an upper part of the substrate 20 and having a contact hole; a second insulating layer being formed at an upper part of the first insulating layer; side walls being formed at an upper part of the first insulating layer and at a side surface of the second insulating layer both in an arc-shape; a first electrode of a capacitor being formed on the contact hole and the side walls; a dielectric layer formed on the first electrode of the capacitor; and a second electrode of the capacitor being formed on the first electrode of the capacitor.

REFERENCES:
patent: 5188975 (1993-02-01), Kojima et al.
patent: 5484744 (1996-01-01), Hong
patent: 5489548 (1996-02-01), Nishioka et al.
patent: 5534458 (1996-07-01), Okudaira et al.

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