Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Reexamination Certificate
2007-03-05
2010-11-09
Thomas, Eric (Department: 2831)
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
C361S303000
Reexamination Certificate
active
07830644
ABSTRACT:
Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.
REFERENCES:
patent: 5484753 (1996-01-01), Kagata et al.
patent: 6060735 (2000-05-01), Izuha et al.
patent: 6727199 (2004-04-01), Subramanian
patent: 2004/0004236 (2004-01-01), Fox et al.
patent: 2006/0120020 (2006-06-01), Dowgiallo, Jr.
patent: 2007/0121274 (2007-05-01), Talvacchio et al.
Chung et al., “Site-selectivity of 3d metal cation dopants and dielectric response in calcium copper titanate”, Mar. 2, 2006, Applied Physics Letters 88, 091917 (2006).
Guzman et al, “Synthesis and characterization of Ca1-xSrxCu3Ti4O12 thin films for dielectric applications” , 2004, Mat. Res. Soc. Symp. Proc. vol. 785, Materials Research Society.
Bochu et al., “Synthèse et caractérisation d'une série de titanates pérowskites isotypes de [CaCu3](Mn4)O12,” Journal of Solid State Chemistry, 29:291-298, 1979.
Li et al., “Correlation Between Dielectric Properties and Sintering Temperatures of Polycrystalline CaCu3Ti4O12,” IEEE Transactions on Dielectrics and Electrical Insulation, 11(3):534-541, 2004.
Fang et al., “Effects of Postanneal Conditions on the Dielectric Properties of CaCu3Ti4O12, Thin Films Prepared on Pt/Ti/SiO2/Si Substrates,” Journal of Applied Physics, 95(11):6483-6485, 2004.
Homes et al., “Optical Response of High-Dielectric-Constant Perovskite-Related Oxide,” Science, 293:673-676, 2001.
Si et al., “Epitaxial Thin Films of the Giant-Dielectric-Constant Material CaCu3Ti4O12Grown by Pulsed-Laser Deposition,” Applied Physics Letters, 81(11):2056-2058, 2002.
Talvacchio et al., “Lattice-Matched, Large-Grain HTS Films for Reproducible Josephson Junctions,” IEEE Transactions on Applied Superconductivity, 13(2):829-832, 2003.
Subramanian et al., “High Dielectric Constant in ACu3Ti4O12and ACu3Ti3FeO12Phases,” Journal of Solid State Chemistry, 151:323-325, 2000.
Anonymous, “Capacitor ESR Ratings—ESR Equivalent Series Resistance,” Transtronics, http://xtronics.com (6 pgs.), 2006.
Adam John D.
Berghmans Andre
Kahler David
Knuteson David J.
Sherwin Marc
Northop Grumman Systems Corporation
Rothwell Figg Ernst & Manbeck P.C.
Thomas Eric
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