High di/dt, light-triggered thyristor with etched moat current l

Details High di/dt, light-triggered thyristor with etched moat current l High di/dt, light-triggered thyristor with etched moat current l

1983-11-14

1985-08-20

Clawson, Jr., Joseph E.

357 30, 357 55, 357 86, 357 51, H01L 2974

Patent

active

045367833

ABSTRACT:
The present invention is directed to a light-triggered thyristor having a high di/dt, high dv/dt, and high photosensitivity. The thyristor has a three-stage cathode emitter gating structure with integrated current limiting resistors. The current limiting resistors are defined by moats etched in the cathode base region. The moats also cause a "turn-on " current to flow through substantially all of the cathode base region.

REFERENCES:
patent: 3943548 (1976-03-01), Terasawa
patent: 3968512 (1976-07-01), Voss
patent: 3995305 (1976-11-01), Voss
patent: 4016592 (1977-04-01), Yatsuo et al.
patent: 4142201 (1979-02-01), Sittig et al.
A. Tada et al., "4 Kv, 1500L-T Thyrs.," Jap. J.A.P., Supplement, 20-1, pp. 99-104, 1981.
V. Temple, "Controlled Thyrs. . . . ", IEEE 1981 IEDM Tech. Digest, pp. 406-409, 1981.

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