High density vertically structured memory

Details High density vertically structured memory High density vertically structured memory

1986-05-02

1989-03-07

Larkins, William D.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 234, 357 55, 365149, H01L 2704, G11C 1140

Patent

active

048110671

ABSTRACT:
A dynamic random access memory is provided wherein each cell has a storage capacitor and switching device and a bit/sense line or plate located along a sidewall of a trench formed in a semiconductor substrate. In a more particular structure of the cell, the trench width defines the length of the switching device, with the storage capacitor and a highly conductive bit/sense line being formed along opposite sidewalls of the trench. In an array of such cells, the highly conductive bit/sense line or plane interconnecting a large number of the cells of the array extends continuously from cell to cell within the trench at a sidewall thereof. Likewise, the storage capacitors of these many cells have a highly conductive common plate extending continuously within the trench at the opposite sidewall.

REFERENCES:
patent: 3387286 (1968-06-01), Dennard
patent: 3811076 (1974-05-01), Smith
patent: 3841926 (1974-10-01), Garnache et al.
patent: 4199772 (1980-04-01), Natori et al.
patent: 4222062 (1980-09-01), Trotter et al.
patent: 4225945 (1980-09-01), Kuo
patent: 4271418 (1981-06-01), Hiltpold
patent: 4276557 (1981-06-01), Levinstein et al.
patent: 4295924 (1981-10-01), Garnache et al.
patent: 4327476 (1982-05-01), Iwai et al.
patent: 4335450 (1982-06-01), Thomas
patent: 4364074 (1982-12-01), Garnache et al.
patent: 4462040 (1984-07-01), Ho et al.
patent: 4663832 (1987-05-01), Jambatkar
patent: 4689113 (1987-08-01), Balasubramanyam et al.

Affiliated with

Also associated with

Rating

High density vertically structured memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High density vertically structured memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density vertically structured memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1672732