High density TEOS-based film for intermetal dielectrics

Details High density TEOS-based film for intermetal dielectrics High density TEOS-based film for intermetal dielectrics

1993-05-25

1995-02-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437195, 437240, H01L 2190

Patent

active

053895819

ABSTRACT:
A method of forming a device and the device itself that utilizes a high density plasma-enhanced TEOS-based intermetal dielectric is disclosed. The high density is accomplished though the use of higher RF power and higher oxygen flow rate so that the TEOS is more completely oxidized. The higher density intermetal dielectric absorbs water from air slower than a standard intermetal dielectric film. This lower water absorbance reduces the amount of water in the device and reduces hot electron induced device degradation.

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Mehta, et al.; "A Single-Pass, In-Situ Planarization Process Utilizing TEOS for Double-Poly, Double-Metal CMOS Technologies"; IEEE 6th Int'l VMIC Conf.; Jun. 1989; pp. 80-88.
Marks, et al.; "In Situ Planarization of Dielectric Surfaces Using Boron Oxide"; IEEE 6th Int'l VMIC Conf.; Jun. 1989; pp. 89-95.

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