High density static memory cell with polysilicon resistors

Details High density static memory cell with polysilicon resistors High density static memory cell with polysilicon resistors

1979-01-02

1981-01-20

Wojciechowicz, Edward J.

357 23, 357 45, 357 50, 357 51, 357 59, H01L 2702

Patent

active

042465931

ABSTRACT:
A semiconductor memory of the static type employs a pair of cross-coupled driver transistors which are formed by a method which results in field oxide over the source and drain regions. Access transistors are formed by a different method and have silicon gates self-aligned with their source and drain diffusions. The load devices are ion-implanted polycrystalline silicon strips which overlie the driver transistors. These features permit a very small cell layout with a minimum of space used for the cross-coupling connections, and the polysilicon address line can cross over the ground line.

REFERENCES:
patent: 4110776 (1978-08-01), Rao et al.
patent: 4160987 (1979-07-01), Dennard et al.

Affiliated with

Also associated with

Rating

High density static memory cell with polysilicon resistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High density static memory cell with polysilicon resistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density static memory cell with polysilicon resistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1769838