High density static memory cell

Details High density static memory cell High density static memory cell

1979-01-02

1981-01-20

Wojciechowicz, Edward J.

357 23, 357 45, 357 50, 357 51, 357 59, H01L 2702

Patent

active

042465923

ABSTRACT:
A semiconductor memory of the static type employs a pair of cross-coupled driver transistors which are formed by a method which results in field oxide over the source and drain regions of the MOS transistors. Access transistors are formed by a different method and have silicon gates self-aligned with their source and drain diffusions. The load devices are punch-through elements resembling short channel transistors without gates. These features permit a cell layout with a minimum of space used for the cross-coupling connections, and the polysilicon address line can cross over the ground line, producing a very small cell size.

REFERENCES:
patent: 4110776 (1978-09-01), Rao et al.
patent: 4160987 (1979-07-01), Dennard et al.

Affiliated with

Also associated with

Rating

High density static memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High density static memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density static memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1769821