High-density SOI cross-point memory fabricating method

Details High-density SOI cross-point memory fabricating method High-density SOI cross-point memory fabricating method

2007-08-21

2007-08-21

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S680000, C438S692000, C438S381000, C438S706000, C257SE21170, C257SE21053, C257SE21058, C257SE21245, C257SE21304, C257SE21646

Reexamination Certificate

active

11216680

ABSTRACT:
A method for fabricating a high-density silicon-on-insulator (SOI) cross-point memory array and an array structure are provided. The method includes the following steps: selectively forming a hard mask on an SOI substrate, defining memory areas, active device areas, and top electrode areas; etching to remove the exposed silicon (Si) surfaces; selectively forming metal sidewalls adjacent the hard mask; filling the memory areas with memory resistor material; removing the hard mask, exposing the underlying Si active device areas; forming an overlying layer of oxide; etching the oxide to form contact holes to the active device areas; forming diodes in the contact holes; and, forming bottom electrode lines overlying the diodes.

REFERENCES:
patent: 6784066 (2004-08-01), Hachisuka
patent: 6797557 (2004-09-01), Chiang
patent: 6809402 (2004-10-01), Hopper et al.
patent: 6859382 (2005-02-01), Rinerson et al.
patent: 7001846 (2006-02-01), Hsu

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