High density single poly metal-gate non-volatile memory cell

Details High density single poly metal-gate non-volatile memory cell High density single poly metal-gate non-volatile memory cell

1996-10-25

1998-06-16

Fears, Terrell W.

Static information storage and retrieval

Floating gate

36518505, G11C 1300

Patent

active

057681864

ABSTRACT:
A high density single-poly metal-gate non-volatile memory cell uses a layer of tunnel oxide formed over a silicon substrate. A floating gate is formed over the tunnel oxide. Source and drain regions are ion implanted in the silicon substrate such that the source and drain regions are self-aligned to the corresponding edges of the floating gate. Following a high temperature anneal cycle which removes the defects in the source and drain regions, a composite layer of ONOP (Oxide-Nitride-Oxide-Polysilicon) coupling dielectric is formed over the floating gate. A metal, typically an aluminum alloy, forms the control gate of the memory cell on top of the composite layer of ONOP coupling dielectric.

REFERENCES:
patent: 5594688 (1997-01-01), Sato

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