High density semiconductor memory array and method of making sam

Details High density semiconductor memory array and method of making sam High density semiconductor memory array and method of making sam

1981-08-24

1985-07-02

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 231, 357 239, 357 41, 357 49, 357 55, 365176, 365182, H01L 2978, H01L 2702, H01L 2712, H01L 2906

Patent

active

045271810

ABSTRACT:
A semiconductor device according to the present invention including a first semiconductor region formed on an insulating substrate which is a bit line and, another or second semiconductor region formed on the substrate which is a power supply line. The semiconductor device also includes an opposite conductive type semiconductor region formed on the substrate which is between the two semiconductor regions, additionally includes a metal wiring layer which is a word line and which is situated on an insulating layer on the opposite conductive type semiconductor region. The first semiconductor region bit line is in parallel with the second semiconductor region powerline which is connected to an electric power supply. The metal wiring word line being perpendicular to the second semiconductor region power line which is connected to the electric power supply.

REFERENCES:
patent: 4236167 (1980-11-01), Woods
patent: 4250569 (1981-02-01), Sasaki
patent: 4297719 (1981-10-01), Hsu
patent: 4317686 (1982-03-01), Anand et al.
P. J. Krick, "MNOS Memory Array Fabricated on an Insulating Substrate", IBM Technical Disclosure Bulletin, vol. 15 (1972) pp. 466-467.
G. V. Clarke and J. E. Tomko, "Capacitor for Single FET Memory Cell", IBM Technical Disclosure Bulletin, vol. 17 (1975) pp. 2579-2580.

Affiliated with

Also associated with

Rating

High density semiconductor memory array and method of making sam does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High density semiconductor memory array and method of making sam, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density semiconductor memory array and method of making sam will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-384498