High-density reprogrammable semiconductor memory device

Details High-density reprogrammable semiconductor memory device High-density reprogrammable semiconductor memory device

1986-08-06

1989-03-21

Edlow, Martin H.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 55, 365185, H01L 2978

Patent

active

048148407

ABSTRACT:
A process for manufacturing a reprogrammable semiconductor memory device, such as EPROM, and its resulting structure is provided. A substrate has a main surface which is provided with grooves formed by etching. An oxide film is formed on the main surface and the side and bottom surfaces of each of the grooves. And, a first layer of doped polysilicon is formed on the oxide film, and the first layer of doped polysilicon is disconnected at the bottom of each of the grooves by selective removal thereof. A second layer of doped polysilicon is formed on the first layer of doped polysilicon with an inter-layer electrical insulator sandwiched therebetween. Thus, the first and second layers of polysilicon, together with the inter-layer insulator, define a stacked-gate electrode structure. A pair of source and drain regions is formed in the substrate one on each side of the stacked-gate electrode structure. The electrode structure is partly formed in the grooves, which allows to save space occupied by a memory cell in a horizontal plane and thus allows to make a memory cell compact in size.

REFERENCES:
patent: 4713677 (1987-12-01), Tigelaar
patent: 4763177 (1988-08-01), Paterson
IBM Technical Disclosure Bulletin, vol. 24, #3, pp. 1331-1333, by Tsang.

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