High density read only memory

Details High density read only memory High density read only memory

1980-04-02

1982-05-04

Hecker, Stuart N.

Static information storage and retrieval

Read only systems

Semiconductive

365182, G11C 1700

Patent

active

043285635

ABSTRACT:
The disclosed read only memory is formed in a two-dimensional matrix comprised of active areas disposed in parallel columns and of conductive layers disposed in rows transverse to the columns. A field-effect transistor is formed at each intersection of a column and a row. The rows of conductive layers are closely packed so that adjacent transistor channels abut one another.

REFERENCES:
patent: 3657614 (1972-04-01), Cricchi
patent: 4059826 (1977-11-01), Rogers
patent: 4084108 (1978-04-01), Fujimoto
Barton et al., "A Cost-Effective 64k CCD Memory," Conference: 1977 Electro Conference Record, New York, (Apr. 19-20, 1977), 3 pages, S74980083v.

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