High density random access memory in an intelligent electric...

Data processing: measuring – calibrating – or testing – Measurement system in a specific environment – Electrical signal parameter measurement system

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S112000, C365S158000, C365S200000, C340S870200, C438S128000, C438S289000, C702S062000, C702S064000, C702S176000, C709S224000, C710S308000

Reexamination Certificate

active

06957158

ABSTRACT:
Methods and devices for monitoring distributed electric power are disclosed, including energy devices with a sensor for monitoring an electric circuit, and a memory to store sensor measurements. Various techniques are disclosed for using polymeric RAM,1T-DRAM, enhanced SRAM, magnetoresistive RAM, organic RAM, chalcogenide RAM, holographic memory, PLEDM, single-electron RAM, fractal cluster glass memory and other technologies in energy devices with high-endurance, high-density, high-capacity, non-volatile, solid-state, or removable memories.

REFERENCES:
patent: 4296464 (1981-10-01), Woods et al.
patent: 4306293 (1981-12-01), Marathe
patent: 4361877 (1982-11-01), Dyer et al.
patent: 4697182 (1987-09-01), Swanson
patent: 4881070 (1989-11-01), Burrowes et al.
patent: 5216623 (1993-06-01), Barrett et al.
patent: 5341328 (1994-08-01), Ovshinsky et al.
patent: 5424974 (1995-06-01), Liu et al.
patent: 5440232 (1995-08-01), Scarzello et al.
patent: 5535399 (1996-07-01), Blitz et al.
patent: 5627759 (1997-05-01), Bearden et al.
patent: 6072608 (2000-06-01), Psaltis et al.
patent: 6077729 (2000-06-01), Harshfield
patent: 6392924 (2002-05-01), Liu et al.
patent: 6615147 (2003-09-01), Jonker et al.
patent: 6625057 (2003-09-01), Iwata
patent: 6671635 (2003-12-01), Forth et al.
patent: 6701363 (2004-03-01), Chiu et al.
patent: 6708126 (2004-03-01), Culler et al.
patent: 6730567 (2004-05-01), Forbes et al.
patent: 2004/0071018 (2004-04-01), Nordal et al.
“A breakthrough in DRAM architecture,”press release, Innovative Silicon Solutions, Le Landeron, Switzerland,available athttp://www.globaltechnoscan.com/31stOct-6thNov01/dram—architecture.htm, pp. 1-2, Nov. 2001.
“Reliable Power Recorder,”brochure, Reliable Power Meters, Los Gatos, CA, pp. 1-8, 2002.
“Holographic Random Access Memory (HRAM),” Proceedings of the IEEE, vol. 87, No. 11, pp. 1931-1940, Nov. 1999.
“Polymer Memory—The plastic path to better data storage,” Technology Review, p. 31, Sep. 2002.
“FRAM Technology Backgrounder—An overview of FRAM technology,”technology note, Ramtron, Colorado Springs, CO, pp. 1-4, Dec. 2000.
“Ramtron Receives $1.6-Million in FRAM Memory Orders for Use in Ampy Power Meters,”press release, Ramtron, Colorado Springs, CO, pp. 1-2, Jun. 2001.
“Top Chinese Utility Meter Manufacturers Choose Ramtron's FRAM Memory Products,”press release, Ramtron, Colorado Springs, CO, pp. 1-2, May 2002.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High density random access memory in an intelligent electric... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High density random access memory in an intelligent electric..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density random access memory in an intelligent electric... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3436462

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.