Static information storage and retrieval – Read only systems – Fusible
Reexamination Certificate
2009-01-09
2011-12-27
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read only systems
Fusible
C365S105000, C365S189070
Reexamination Certificate
active
08085571
ABSTRACT:
The invention shows how diodes in a modern semiconductor process can be used as a very compact switch element in a Programmable Read Only Memory (PROM) using common integrated circuit fuse elements such as polysilicon and metal. This compact switch element allows very dense PROM arrays to be realized since diodes have the highest conduction density of any semiconductor device. The high conduction density is used to provide the relatively high current needed to blow the fuse element open. Since MOSFETs are typically used as fuse array switch elements, a relatively large area is required for the MOSFET to reach the current needed to blow the fuse element. Since diodes are two terminal switch elements unlike MOSFETs which are three terminal devices, methods are outlined on how to both read and write the arrays using this two terminal switch.
REFERENCES:
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4701695 (1987-10-01), Chan et al.
patent: 5193073 (1993-03-01), Bhuva
patent: 6625055 (2003-09-01), Smith et al.
patent: 6850432 (2005-02-01), Lu et al.
patent: 6958523 (2005-10-01), Babcock et al.
patent: 2003/0189851 (2003-10-01), Brandenberger et al.
patent: 2004/0037106 (2004-02-01), Lu et al.
patent: 2009/0097295 (2009-04-01), Morimoto
patent: 2010/0110778 (2010-05-01), Lee et al.
patent: 2011/0007554 (2011-01-01), Kaeriyama et al.
patent: 2011/0096588 (2011-04-01), Fasoli
E. Worley, “Distributed Gate ESD Network Architecture for Inter-Power Domain Signals”, Proceedings of the EOS/ESD Symposium, EOS-26, 2004, p. 238.
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