Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-01-25
2005-01-25
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S475000, C438S710000, C438S714000, C438S723000, C438S782000, C438S783000, C438S798000
Reexamination Certificate
active
06846745
ABSTRACT:
Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of both hydrogen and fluorine as process gases in the reactive mixture of a plasma-containing CVD reactor. The process gas also includes dielectric forming precursors such as silicon and oxygen-containing molecules.
REFERENCES:
patent: 5129958 (1992-07-01), Nagashima et al.
patent: 5252178 (1993-10-01), Moslehi
patent: 5711998 (1998-01-01), Shufflebotham
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6106678 (2000-08-01), Shufflebotham et al.
patent: 6184158 (2001-02-01), Shufflebotham et al.
patent: 6200412 (2001-03-01), Kilgore et al.
patent: 6232196 (2001-05-01), Raaijmakers et al.
patent: 6395150 (2002-05-01), Van Cleemput et al.
patent: 6400023 (2002-06-01), Huang
patent: 6596653 (2003-07-01), Tan et al.
patent: 6599829 (2003-07-01), Smith et al.
patent: 20010044203 (2001-11-01), Huang et al.
patent: 20020179570 (2002-12-01), Mathad et al.
patent: 20030207580 (2003-11-01), Li et al.
patent: 20040082181 (2004-04-01), Doan et al.
Papasouliotis et al., “Method of Chemical Modification of Structure Topography”, Filed Dec. 3, 2001, U.S. Patent Application Ser. Number has not yet been assigned.
Papasouliotis et al., “Process for Depositing F-Doped Silica Glass in High Aspect Ratio Structures”, Filed Dec. 21, 2001, U.S. Patent Application Ser. Number has not yet been assigned.
Gauri Vishal
Papasouliotis George D.
Singh Vikram
Tarafdar Raihan M.
Beyer Weaver & Thomas LLP
Hogans David L.
Novellus Systems Inc.
Thompson Craig A.
LandOfFree
High-density plasma process for filling high aspect ratio... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-density plasma process for filling high aspect ratio..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-density plasma process for filling high aspect ratio... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3424451