High density one device memory cell arrays

Details High density one device memory cell arrays High density one device memory cell arrays

1984-06-28

1987-03-17

Munson, Gene M.

357 41, 357 45, H01L 2978, H01L 2702, H01L 2710

Patent

active

046511830

ABSTRACT:
A memory is provided which includes a semiconductor substrate having a diffusion region disposed therein, first, second, third and fourth storage capacitors, first, second, third and fourth switching or transfer devices for coupling the first, second, third and fourth storage capacitors, respectively, to the diffusion region, a common conductor connected to the diffusion region and means for selectively activating the switching devices. In a more specific aspect of this invention, a plurality of groups of the four storage capacitors are arranged so that each of these capacitors is selectively coupled to the common conductor. In another aspect of this invention, the storage capacitors of the plurality of groups are arranged in parallel rows with the common conductor arranged obliquely to the direction of the rows of storage capacitors.

REFERENCES:
patent: 4012757 (1977-05-01), Koo
patent: 4125854 (1978-11-01), McKenny et al.
patent: 4240195 (1980-12-01), Clemens et al.
patent: 4287571 (1981-09-01), Chakravarti et al.
patent: 4376983 (1983-03-01), Tsaur et al.
patent: 4388121 (1983-06-01), Rao
patent: 4476547 (1984-10-01), Miyasaka
patent: 4482908 (1984-11-01), Henderson
patent: 4491858 (1985-01-01), Kawamoto

Affiliated with

Also associated with

Rating

High density one device memory cell arrays does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High density one device memory cell arrays, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density one device memory cell arrays will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1791168