High density non-volatile flash memory without adverse effects o

Details High density non-volatile flash memory without adverse effects o High density non-volatile flash memory without adverse effects o

1997-11-19

1999-02-02

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518521, 36518526, G11C 1604

Patent

active

058674292

ABSTRACT:
Electric field coupling between floating gates of a high density flash EEPROM cell array has been found to produce errors in reading the states of the cells, particularly when being operated with more than two storage states per cell. The effect of this coupling is overcome by placing a conductive shield or insulating material with a low dielectric constant between adjacent floating gates, and/or by compensating for the coupling when reading the states of the cells.

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