High density MRAM cell array

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S057000, C257S421000

Reexamination Certificate

active

06365419

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to apparatus and method for increasing the density of MRAM cells in a memory array.
BACKGROUND OF THE INVENTION
The architecture for Magnetoresistive Random Access Memory (MRAM) is composed of a plurality or array of memory cells and a plurality of digit and bit line intersections. The magnetoresistive memory cell generally used is composed of a magnetic tunnel junction (MTJ), an isolation transistor, and the intersection of digit and bit lines. The isolation transistor is generally a N-channel field effect transistor (FET). An interconnect stack connects the isolation transistor to the MTJ device, to the bit line, and to the digit line used to create part of the magnetic field for programming the MRAM cell. A standard CMOS process that utilizes a planar interconnect backend is generally used for the integration of the MRAM cells. Planar backend interconnect schemes are found in architectures using tungsten stud or damascene copper interconnects. The interconnect stack of the CMOS process can be either Al—Cu or copper based interconnect materials. The number of interconnect layers in the CMOS process may vary, depending upon the specific memory and devices associated with the memory which are fabricated on the same chip. Because the memory includes hundreds of thousands of cells, even small area savings in each cell can result in major advantages in density of the memory.
Accordingly it is highly desirable to provide apparatus and a method of improving the density of MRAM cells in a memory array by reducing the area of individual MRAM cells.


REFERENCES:
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5804458 (1998-09-01), Tehrani et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High density MRAM cell array does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High density MRAM cell array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density MRAM cell array will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2867119

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.