High-density MOS transistor

Details High-density MOS transistor High-density MOS transistor

2006-11-28

2006-11-28

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S287000

Reexamination Certificate

active

07141837

ABSTRACT:
A MOS transistor formed in a silicon substrate comprising an active area surrounded with an insulating wall, a first conductive strip covering a central strip of the active area, one or several second conductive strips placed in the active area right above the first strip, and conductive regions placed in two recesses of the insulating wall and placed against the ends of the first and second strips, the silicon surfaces opposite to the conductive strips and regions being covered with an insulator forming a gate oxide.

REFERENCES:
patent: 5965914 (1999-10-01), Miyamoto
patent: 6207530 (2001-03-01), Hsu et al.
patent: 6396108 (2002-05-01), Krivokapic et al.
patent: 6495403 (2002-12-01), Skotnicki et al.
patent: 2001/0053569 (2001-12-01), Skotnicki et al.
patent: 199 28 564 (2001-01-01), None
patent: 101 19 411 (2001-11-01), None
patent: 0 612 103 (1994-08-01), None

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