1981-08-14
1984-01-24
Munson, Gene M.
357 89, H01L 2974
Patent
active
044279892
ABSTRACT:
A dynamic memory cell has a P+ injector region surrounded by an N+ region in an N- layer on an N+ layer. The injector region is placed between N+ source and drain regions. Holes injected into the N-layer are trapped by the high-low junctions at the N+, N- interfaces and are detected by sensing the source-drain current. Current levels are used to establish binary one and zero levels in the cell. Four masks in an aligned procedure simplify fabrication.
REFERENCES:
patent: 3868718 (1975-02-01), Arai
patent: 4328511 (1982-05-01), Tasch et al.
Arai "Charge-Storage Junction Field-Effect Transistor" IEEE Trans. Electron Devices, vol. ED-22 (4/75) pp. 181-185.
Anantha Narasipur G.
Bhatia Harsaran S.
Gaur Santosh P.
Walsh James L.
International Business Machines - Corporation
Munson Gene M.
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