Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-06-11
2010-02-23
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S296000, C257S301000, C257S308000, C257S905000, C257SE27084
Reexamination Certificate
active
07667234
ABSTRACT:
A memory array having decreased cell sizes and having transistors with increased channel widths. More specifically, pillars are formed in a substrate such that sidewalls are exposed. The sidewalls of the pillars and the top surface of the pillars are covered with a gate oxide and a polysilicon layer to form a channel through the pillars. The current path through the channel is approximately equal to twice the height of the pillar plus the width of the pillar. The pillars are patterned to form non-linear active area lines having angled segments. The polysilicon layer is patterned to form word lines that intersect the active area lines at the angled segments.
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U.S. Appl. No. 11/286,070.
Mouli Chandra
Tran Luan
Wang Hongmei
Fletcher Yoder
Louie Wai-Sing
Micron Technology Inc
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