Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
Reexamination Certificate
2006-05-09
2006-05-09
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular signal path connections
C257S208000
Reexamination Certificate
active
07042030
ABSTRACT:
The memory array contains two layers representing word lines of different rows. Each row contains multiple bit cells sharing the same word line. The two layers are stacked one on top of another to form a high density memory array.
REFERENCES:
patent: 4827449 (1989-05-01), Inoue
patent: 5361223 (1994-11-01), Inoue et al.
patent: 5698872 (1997-12-01), Takase et al.
patent: 5740099 (1998-04-01), Tanigawa
patent: 5875148 (1999-02-01), Tanaka et al.
patent: 5877537 (1999-03-01), Aoki
patent: 6229169 (2001-05-01), Hofmann et al.
patent: 6442078 (2002-08-01), Arimoto
patent: 6563727 (2003-05-01), Roth et al.
patent: 6707085 (2004-03-01), Jang et al.
patent: 6849905 (2005-02-01), Ilkbahar et al.
patent: 6891262 (2005-05-01), Nomoto et al.
patent: 2004/0125629 (2004-07-01), Scheuerlein et al.
Balasuramanian Suresh
Jamison George
Mishra Mohan
Spriggs Stephen Wayne
Brady III W. James
Lee Eugene
Stewart Alan K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
LandOfFree
High density memory array does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High density memory array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density memory array will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3612590