High density maze capacitor

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

Reexamination Certificate

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Details

C361S309000, C361S329000, C257S306000, C257S310000, C029S025410

Reexamination Certificate

active

07151660

ABSTRACT:
A capacitor including a first and second component capacitor structure disposed on a substrate. A component capacitor structure includes a first arm, a second arm, and a via. The first arm has a first end and a second end. The second arm has a third end and a fourth end. The first arm and the second arm intersect and the first, second, third and fourth ends all extend in the same rotary direction. The via is electrically coupled to an area of intersection of the first and second arms.

REFERENCES:
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patent: 6653681 (2003-11-01), Appel
patent: 6690570 (2004-02-01), Hajimiri et al.
patent: 2003/0206389 (2003-11-01), Hajimiri et al.
patent: 2004/0031982 (2004-02-01), Devries et al.
Roberto Aparicio,Student Member, IEEE, and Ali Hajimiri,Member, IEEE; Capacity Limits and Matching Properties of Integrated Capacitors; IEEE Journal of Solid-State Circuits, pp. 384-393, vol. 37, No. 3, Mar. 2002.
Hirad Samavati,Student Member, IEEE, Ali Hajimiri, Arvin R. Shahani, Gitty N. Nasserbakht, and Thomas H. Lee,Member, IEEE; Fractal Capacitors; IEEE Journal of Solid-State Circuits, pp. 2035-2041, vol. 33, No. 12, Dec. 1998.
Jay Rajagopalan and Haris Basit; Optimization of Metal-Metal Comb-Capacitors for RF Applications, 4 pages, 2001.
Tirdad Sowlati, Vickram Vathulya and Domine Leenaerts; High Density Capacitance Structures in Submicron CMOS for Lower Power RF Applications,ISLPED'01, Aug. 6-7, 2001, pp. 243-246.

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