High density mask ROM having flat-type bank select

Details High density mask ROM having flat-type bank select High density mask ROM having flat-type bank select

2005-03-22

2005-03-22

Auduong, Gene N (Department: 2818)

Static information storage and retrieval

Read only systems

Semiconductive

C365S052000, C365S063000

Reexamination Certificate

active

06870752

ABSTRACT:
The present invention provides a read-only memory array having a flat-type structure. The read-only memory array comprises at least two memory banks having a plurality of memory cells. At least two inter-bank transistors are coupled to the two memory banks and shared by the two memory banks. Each inter-bank transistor is used for enabling to select the memory cells of the two memory banks. At least a contact commonly is coupled to the two memory banks through the two inter-bank transistors.

REFERENCES:
patent: 5909405 (1999-06-01), Lee et al.
patent: 6072734 (2000-06-01), Choi
patent: 6084794 (2000-07-01), Lu et al.
patent: 6088277 (2000-07-01), Kim et al.
patent: 6333867 (2001-12-01), Suzuki et al.
patent: 6621756 (2003-09-01), Lin et al.

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