High density local interconnect in an integrated circit using me

Details High density local interconnect in an integrated circit using me High density local interconnect in an integrated circit using me

1992-09-15

1993-06-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 56, 437 57, 437193, H01L 2144

Patent

active

052234568

ABSTRACT:
A metal silicide layer in or on a body of silicon wafer is used for interconnecting two or more CMOS circuit devices. In addition to a polysilicon layer and a metal layer, the metal silicide layer provides an additional layer of local interconnect which can be performed at high density to reduce the size of the die while including the same number of circuit devices. An amorphous silicon layer doped at selected regions may be used as an additional interconnect.

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