High density local interconnect in a semiconductor circuit using

Details High density local interconnect in a semiconductor circuit using High density local interconnect in a semiconductor circuit using

1991-10-08

1993-10-19

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257 51, 257 52, 257369, H01L 2702, H01L 2348, H01L 2946, H01L 2954

Patent

active

052548740

ABSTRACT:
A metal silicide layer in or on a body of silicon wafer is used for interconnecting two or more CMOS circuit devices. In addition to a polysilicon layer and a metal layer, the metal silicide layer provides an additional layer of local interconnect which can be performed at high density to reduce the size of the die while including the same number of circuit devices. An amorphous silicon layer doped at selected regions may be used as an additional interconnect.

REFERENCES:
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4443930 (1984-04-01), Hwang et al.
patent: 4549914 (1985-10-01), Oh
patent: 4581627 (1986-04-01), Ueda et al.
patent: 4596604 (1986-06-01), Akiyama et al.
patent: 4597163 (1986-07-01), Tsang
patent: 4648175 (1987-03-01), Metz, Jr. et al.
patent: 4679310 (1987-07-01), Ramachandra et al.
patent: 4777150 (1988-10-01), Deneuville et al.
patent: 4785341 (1988-11-01), Ning et al.
patent: 4786611 (1988-11-01), Pfiester
patent: 4816425 (1989-03-01), McPherson
patent: 4873204 (1989-10-01), Wong et al.
patent: 4933994 (1990-06-01), Orban
patent: 4946803 (1990-08-01), Ellwanger
patent: 4951117 (1990-08-01), Kasai
patent: 4977098 (1990-12-01), Yu et al.
patent: 4988643 (1991-01-01), Tsou
patent: 4994402 (1991-02-01), Chiu
patent: 5043778 (1991-08-01), Teng et al.
L. D. Locker et al., "Reaction Kinetics of Tungsten Thin Films on Silicon (100) Surfaces", Journal of Applied Physics, vol. 44, (Oct. 1973) pp. 4366-4369.

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