High density interconnect with high volumetric efficiency

Details High density interconnect with high volumetric efficiency High density interconnect with high volumetric efficiency

1988-09-27

1991-05-28

Picard, Leo P.

Electricity: electrical systems and devices

Miscellaneous

361396, H05K 111

Patent

active

050199463

ABSTRACT:
Interconnected integrated circuits (16) packaged at a very high density are fabricated beginning with a plurality of substrates (50 or 400 or 500) where each substrate has metal edge contact sites (12 or 507). Several substrates are joined together in a stack (82 or 402 or 512) held together tightly by bolts (62) or by a thermoplastic adhesive (510). An interconnect pattern (250 or 423) electrically connects integrated circuits (16) on different substrates. Defective substrates are removable from the stack for repair by removing the bolts or by heating the adhesive to soften it sufficiently to allow removal of the individual substrate. The interconnect pattern, which is removed whenever a substrate is replaced, is reapplied after the removed substrate has been replaced.

REFERENCES:
patent: 3029495 (1962-04-01), Doctor
patent: 4283755 (1981-08-01), Tracy
patent: 4574331 (1986-03-01), Smolley
patent: 4689103 (1987-08-01), Elarde
patent: 4733461 (1988-03-01), Nakano
patent: 4783695 (1988-11-01), Eichelberger et al.
patent: 4811166 (1989-03-01), Alvarez et al.
patent: 4868712 (1989-09-01), Woodman
patent: 4882454 (1989-11-01), Peterson et al.
C. W. Eichelberger et al., "High-Density Interconnects for Electronic Packaging", SPIE, vol. 877, Micro-Optoelectronic Materials (1988), pp. 90-91.

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