Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Patent
1998-05-13
1999-02-09
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
257780, 257697, H01L 2348
Patent
active
058698990
ABSTRACT:
A method of creating high density interlayer interconnects on circuit carrying substrates. A circuit pattern (20) is formed on one side of a substrate (10), and gold balls (30) are selectively placed on the circuit pattern using a thermosonic ball bonder. A liquid solution of a polymer is cast directly on the substrate and the etched circuit pattern such that only the upper portion of each gold ball is revealed when the liquid polymer solution is then dried and cured to form a dry film (40). A second layer of metal is then deposited directly on the dry film, such that it is electrically and mechanically connected to the exposed top of the gold balls. A second circuit pattern (50) is then formed in the second layer of metal. The resulting high density interconnect has two circuit layers separated by a dielectric layer. Each circuit layer is connected to the other by the gold balls that serve as conductive vias.
REFERENCES:
patent: 4354911 (1982-10-01), Dodd et al.
patent: 4807021 (1989-02-01), Okumura
patent: 4827326 (1989-05-01), Altman et al.
patent: 4908689 (1990-03-01), McBride et al.
patent: 5045921 (1991-09-01), Lin et al.
patent: 5103290 (1992-04-01), Temple et al.
patent: 5403776 (1995-04-01), Asuji et al.
patent: 5473814 (1995-12-01), White
patent: 5579573 (1996-12-01), Baker et al.
patent: 5600180 (1997-02-01), Kusaka et al.
patent: 5604379 (1997-02-01), Mori
patent: 5703406 (1997-12-01), Kang
patent: 5726500 (1998-03-01), Duboz et al.
patent: 5729051 (1998-03-01), Nakamura
patent: 5757078 (1998-05-01), Matsuda et al.
patent: 5777391 (1998-07-01), Nakamura et al.
Arledge John K.
Swirbel Thomas J.
Dorinski Dale W.
Hardy David B.
Martin-Wallace Valencia
Motorola Inc.
LandOfFree
High density interconnect substrate and method of manufacturing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High density interconnect substrate and method of manufacturing , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density interconnect substrate and method of manufacturing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1951818