High density integrated read-only memory

Details High density integrated read-only memory High density integrated read-only memory

1980-12-05

1983-07-19

Richardson, Robert L.

Static information storage and retrieval

Read only systems

Semiconductive

G11C 1140

Patent

active

043947476

ABSTRACT:
Integrated read-only memory including nxm memory cells located at the intersections of m bit lines and n word lines in which binary information of a first type is represented by the presence of a connection to a transistor in a cell, the base of said transistor being connected to a word line while its emitter is connected to a bit line, and in which binary information of a second type is represented by the absence of a connection to a transistor in a cell, said memory being of the type in which reading is ensured by means of m read transistors the emitters of which are connected to the bit lines while their bases are connected to a reference voltage supply, the improvement comprising read transistors arranged into k adjacent sets of m/k consecutive elements, k being an integer submultiple of m, the transistors of each set being provided in the same collector epitaxial bed in a semiconductor substrate with a collector contact common to all the transistors, the collector contact of each set being connected to a read circuit.

REFERENCES:
patent: 4328563 (1982-05-01), Schroeder
IBM Technical Disclosure Bull., vol. 14, No. 11, Apr. 1972, p. 3245.
IEEE Journal of Solid State Circuits, vol. SC-5, No. 5, pp. 196-202, Oct. 1970.
Embinder, Semiconductor Memories, 1971, pp. 48-49.
IBM Technical Disclosure Bull., vol. 13, No. 9, Feb. 1971, p. 2770.

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