High density, independently addressable, surface emitting semico

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

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257 93, 257 94, 257 95, 372 50, H01L 3300, H01L 29161, H01L 2702, H01L 2906

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active

053171705

ABSTRACT:
A high density surface emitting semiconductor LED array comprises disordered regions extending through a second contact layer, second confinement layer, an active layer and partially extending through a first confinement layer to define light emitting areas therebetween the disordered regions. Individual contacts on the second contact layer aligned with each emitting area inject current through the layers to a common contact on a first contact layer causing emission of light from the active layer through the surface of the exposed first contact layer. The second confinement layer can be replaced with a DBR to form an enhanced LED array. Both confinement layers can be replaced with DBRs to form a laser array. A refractive semiconductor layer, fresnel lenses or a micro lens array can be used to optically modify the surface emitted light. The semiconductor laser/light emitting diode arrays are fabricated without a substrate.

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