Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Patent
1993-04-13
1994-05-31
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
257 93, 257 94, 257 95, 372 50, H01L 3300, H01L 29161, H01L 2702, H01L 2906
Patent
active
053171705
ABSTRACT:
A high density surface emitting semiconductor LED array comprises disordered regions extending through a second contact layer, second confinement layer, an active layer and partially extending through a first confinement layer to define light emitting areas therebetween the disordered regions. Individual contacts on the second contact layer aligned with each emitting area inject current through the layers to a common contact on a first contact layer causing emission of light from the active layer through the surface of the exposed first contact layer. The second confinement layer can be replaced with a DBR to form an enhanced LED array. Both confinement layers can be replaced with DBRs to form a laser array. A refractive semiconductor layer, fresnel lenses or a micro lens array can be used to optically modify the surface emitted light. The semiconductor laser/light emitting diode arrays are fabricated without a substrate.
REFERENCES:
patent: 4870652 (1989-09-01), Thornton
patent: 5031187 (1991-07-01), Orenstein et al.
patent: 5073041 (1991-12-01), Rastani
patent: 5216263 (1993-06-01), Paoli
Yablonitch et al., "Double Heterostructure GaAs/AlGaAs Thin Film Diode Lasers on Glass Substrates", IEEE Photonics Technology Letters, vol. 1, No. 2, pp. 41-42, Feb. 1989.
Tell et al., "High-Power cw Vertical-Cavity Top Surface-Emitting GaAs Quantum Well Lasers", Applied Physics Letters, vol. 57, No. 18, pp. 1855-1857, Oct. 29, 1990.
Rastani et al., "Arrays of Fucsed Beams . . . ", Spatial Light Modulators and Applications, 1990 Technical Digest, vol. 14, pp. 76-79, Sep. 10-12, 1990.
Chang-Hasnain et al., "Surface Emitting Laser Arrays with Uniformly Separated Wavelengths", Electronics Letters, vol. 26, No. 13, pp. 940-942, Jun. 21, 1990.
Jewell et al., "Low-Threshold Electrically Pumped Vertical-Cavity Surface-Emitting Microlasers", Electronics Letters, vol. 25, No. 17, pp. 1123-1124, Aug. 17, 1989.
Prenty Mark V.
Propp William
Xerox Corporation
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