Coherent light generators – Particular active media – Semiconductor
Patent
1990-12-28
1991-10-29
Epps, Georgia
Coherent light generators
Particular active media
Semiconductor
372 45, 357 17, H01S 319
Patent
active
050621157
ABSTRACT:
A high density surface emitting semiconductor LED array comprises disordered regions extending through a contact layer, a second confinement layer, an active layer and partially extending through a first confinement layer to define optical cavities therebetween the disordered regions, individual contacts on the contact layer aligned with each disordered region inject current through the optical cavity to a contact on a substrate causing emission of light from the active layer in the optical cavity through the surface of the contact layer. The first confinement layer can be replaced with a DBR to form an enhanced LED array. Both confinement layers can be replaced with DBRs to form a laser array. The first confinement layer can be replaced with a distributed Bragg reflector (DBR) and a dielectric mirror stack can be formed on the contact layer to form a laser array.
REFERENCES:
patent: 4706255 (1987-11-01), Thornton et al.
patent: 4727557 (1988-02-01), Burnham et al.
patent: 4831629 (1989-05-01), Paoli et al.
patent: 4870652 (1989-09-01), Thornton
patent: 4987468 (1991-01-01), Thornton
Epps Georgia
Propp William
Xerox Corporation
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