High-density IC isolation technique capacitors

Details High-density IC isolation technique capacitors High-density IC isolation technique capacitors

1984-04-23

1985-04-23

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148187, 357 34, 357 91, H01L 21265, H01L 2120

Patent

active

045128162

ABSTRACT:
A semiconductor substrate having an epitaxial layer on its upper surface is provided with a masking layer. Holes are photolithographically etched in the masking layer where isolation diffusion regions are to be formed. Then aluminum ions are implanted into the surface and diffused completely through the epitaxial layer so as to create tubs of epitaxial material that are PN junction isolated. Since aluminum is a fast diffuser, the diffusion time is greatly reduced, thereby reducing the up diffusion of buried N+ collector so that the original epitaxial layer can be made relatively thin. Lateral isolation diffusion is reduced, thereby substantially reducing the surface area required for isolation. Thus, the process is capable of increasing the component density in the completed integrated circuit.

REFERENCES:
patent: 3752715 (1973-08-01), Antipov et al.
patent: 3933528 (1976-01-01), Sloan, Jr.
patent: 4087900 (1978-05-01), Yiannoulos
patent: 4111726 (1978-09-01), Chen
patent: 4233615 (1980-11-01), Takemoto et al.
patent: 4295898 (1981-10-01), Yoshida et al.
Raheja, IBM-TDB, 21, (1978), 1439.
Muggli, IBM-TDB, 24, (1981), 997.

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