High density/high speed MOS process and device

Details High density/high speed MOS process and device High density/high speed MOS process and device

1975-12-16

1977-07-05

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29577, 29578, 357 41, 357 46, B01J 1700

Patent

active

040330265

ABSTRACT:
A process for fabricating MOS silicon gate transistors which provide high density and high speed devices. The process includes the use of a boron ion implantation step to prevent punch-through and to adjust the thresholds of enhancement mode transistors. Both enhancement mode and depletion mode transistors are simultaneously produced with the disclosed process.

REFERENCES:
patent: 3646665 (1972-03-01), Kim
patent: 3660735 (1972-05-01), McDougall
patent: 3752711 (1973-08-01), Kooi

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