High density gallium arsenide source driven logic circuit

Details High density gallium arsenide source driven logic circuit High density gallium arsenide source driven logic circuit

1983-06-13

1986-05-20

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307448, H03K 1921, H03K 19094

Patent

active

045903930

ABSTRACT:
A novel high speed gallium arsenide depletion mode field effect transistor logic circuit is provided. One logic input is connected to the source electrode of the switching transistor and draws current when a low level input voltage is provided. Other logic inputs are connected to the gate electrode of the switching transistor and supplies current when a high or low level input voltage is provided. The novel logic output from the source electrode of the switching transistor is a complex OR function which may be employed for a logic family having fewer stages of logic than prior art gallium arsenide circuits.

REFERENCES:
patent: 3443122 (1969-05-01), Bowers, Jr.
patent: 3500062 (1970-03-01), Annis
patent: 3569729 (1971-03-01), Washizuka et al.
patent: 4233524 (1980-11-01), Burdick

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