High density floating gate EPROM programmable by charge storage

Details High density floating gate EPROM programmable by charge storage High density floating gate EPROM programmable by charge storage

1979-10-01

1981-08-04

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 23, 357 41, 357 54, 357 59, 365185, H03K 500, G11C 1140, H01L 2978, H01L 2702

Patent

active

042824460

ABSTRACT:
A floating gate type electrically programmable memory device is made by an N-channel double-level polysilicon self-aligned process which results in a very dense array. The programming inefficiency caused by inherent resistance of elongated diffused regions used as column lines is overcome by a capacitive discharge programming method. Distributed capacitance of the column lines is charged to the programming voltage before the selected row line is brought to a high voltage, producing a pulse of current through the cell. A series of these programming pulses may be used.

REFERENCES:
patent: 4112509 (1978-09-01), Wall
patent: 4151021 (1979-04-01), McElroy
patent: 4184207 (1980-01-01), McElroy

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