High-density FinFET integration scheme

Details High-density FinFET integration scheme High-density FinFET integration scheme

2006-01-17

2006-01-17

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With resistive region connecting separate sections of device

C438S142000, C438S157000, C438S167000, C438S186000, C438S197000, C438S578000, C438S669000

Reexamination Certificate

active

06987289

ABSTRACT:
The invention provides a method of manufacturing a fin-type field effect transistor (FinFET) that forms a unique FinFET that has a first fin with a central channel region and source and drain regions adjacent the channel region, a gate intersecting the first fin and covering the channel region, and a second fin having only a channel region.

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