High density electronic interconnection

Details High density electronic interconnection High density electronic interconnection

2007-09-18

2007-09-18

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C438S027000, C438S064000, C438S125000, C438S613000, C257SE21001

Reexamination Certificate

active

10989882

ABSTRACT:
This is an interconnection between electronic devices and other assemblies (e.g. printed circuits). The electronic devices are mounted on high temperature insulating bases, such as ceramic substrates. The insulating base has a conductive pattern to connect the electronic device to another assembly. The conductive pattern terminates in metal bumps capable of being connected to another assembly (e.g. a printed circuit) by a conductive adhesive or metallurgically by soldering, thermocompression, thermosonic or ultrasonic bonding. The bumps are formed by applying a metal with a melting point over 350° C. to contact pads of the conductive pattern of the insulating base, and raising the temperature of the base above the melting point of the metal causing the molten metal to draw back on to the contact pads forming a convex bump. In one embodiment metal bumps are formed on the conductive pattern of the lid of an electronic package and welded through a sealing layer to the ring frame of the package, and through the ring frame connected to the conductive pattern of the base of the package.

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