Static information storage and retrieval – Floating gate – Particular biasing
Patent
1993-11-15
1995-03-28
Limanek, Robert P.
Static information storage and retrieval
Floating gate
Particular biasing
36523006, 257321, G11C 800
Patent
active
054023726
ABSTRACT:
The memory array of a high density, electrically-erasable, programmable read-only-memory (EEPROM) is divided into a series of segments which are individually accessible via a plurality of segment select transistors. When a specific memory cell or cells is to be read, only the segment select transistors which correspond to the segment of memory which contains the specific memory cell or cells are turned on. As a result, the time required to access the specific memory cell or cells can be significantly reduced.
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Limanek Robert P.
National Semiconductor Corporation
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