Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2011-08-23
2011-08-23
Such, Matthew W (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51039, C423S44500R, C977S745000, C977S847000
Reexamination Certificate
active
08003979
ABSTRACT:
The present invention relates to a method of preparing a carbon nanotube-quantum dot conjugate having a high density of quantum dots (QDs) on its surface. This method involves providing a plurality of semiconductor quantum dots and providing a thiol-functionalized carbon nanotube having a plurality of terminal thiol groups on its surface. The plurality of semiconductor quantum dots are attached to the surface of the carbon nanotube under conditions effective to yield a carbon nanotube-quantum dot conjugate having a high density of quantum dots on its surface. The present invention also relates to a carbon nanotube-quantum dot conjugate having a high density of quantum dots on its surface. The present invention further relates to a photodetector device. This device includes a substrate and a nanocomposite layer. The nanocomposite layer includes a plurality of the carbon nanotube-quantum dot conjugates previously described.
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Cho Nam-chul
Choudhury Kaushik Roy
Lee Kwang Sup
Prasad Paras N.
Sahoo Yudhisthira
LeClairRyan
Such Matthew W
The Research Foundation of State University of New York
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