Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2005-01-11
2005-01-11
Lam, David (Department: 2818)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S189070, C711S108000
Reexamination Certificate
active
06842360
ABSTRACT:
A content addressable memory (CAM) cell. The CAM cell includes a first and second memory cells and a diffusion region. First and second transistors are formed adjacent one another in the diffusion region and coupled to the first memory cell, and third and fourth transistors are formed adjacent one another in the diffusion region and coupled to the second memory cell.
REFERENCES:
patent: 3531778 (1970-09-01), Gardner et al.
patent: 3543296 (1970-11-01), Gardner et al.
patent: 3609702 (1971-09-01), Gardner et al.
patent: 3644906 (1972-02-01), Weinberger
patent: 3681762 (1972-08-01), Minshull et al.
patent: 3706977 (1972-12-01), Dailey et al.
patent: 3708788 (1973-01-01), Dailey et al.
patent: 3761902 (1973-09-01), Weinberger
patent: 3771142 (1973-11-01), Minshull et al.
patent: 3890603 (1975-06-01), Jones et al.
patent: 3924243 (1975-12-01), Vermeulen
patent: 4942556 (1990-07-01), Sasaki et al.
patent: 5319590 (1994-06-01), Montoye
patent: 5841874 (1998-11-01), Kempke et al.
patent: 6044005 (2000-03-01), Gibson et al.
patent: 6137707 (2000-10-01), Srinivasan et al.
patent: 6154384 (2000-11-01), Nataraj et al.
patent: 6310880 (2001-10-01), Waller
patent: 6373739 (2002-04-01), Lien
patent: 6522562 (2003-02-01), Foss
patent: 6563727 (2003-05-01), Roth et al.
patent: 6597594 (2003-07-01), Waller
patent: 6697275 (2004-02-01), Sywyk et al.
patent: 1127270 (1968-09-01), None
patent: 1281387 (1972-07-01), None
Flinders, M. et al., “Functional Memory as a General Purpose Systems Technology,” IBM UK Laboratories Ltd., IEEE Compcon, pp. 314-324, Jun. 1970.
Gardner, P.L., “Functional Memory and Its Microprogramming Implications,” IEEE Trans. on Computers, vol. C-20, No. 7, pp. 764-775, Jul. 1971.
Kohonen, T., “Content-Addressable Memories,” Springer-Verlag Berlin Heidelberg, pp. 173-178, 1980.
Lam David
NetLogic Microsystems, Inc.
Shemwell Gregory & Courtney LLP
LandOfFree
High-density content addressable memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-density content addressable memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-density content addressable memory cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3412301