High density collector-up structure

Details High density collector-up structure High density collector-up structure

1977-02-07

1978-06-27

Miller, Jr., Stanley D.

357 35, 357 36, 357 44, 357 48, H01L 2972

Patent

active

040978885

ABSTRACT:
A high density semiconductor structure and method is disclosed including a semiconductor body of one conductivity having a substantially planar surface. A first region of one conductivity is formed in the body and extends to the surface. A layer of opposite conductivity is interposed between the first region and the body said layer having relatively thin and uniform walls which extend to separate the first region from the body. At least one opposite conductivity region is formed entirely within the first region and extends to the surface. An opposite conductivity region is formed in the body and overlaps a portion of the layer. Lead means are provided for contacting each of the respctive regions and the body. The collector-up injection logic structure thus formed requires little or no surface area for the injection source transistor.

REFERENCES:
patent: 3486085 (1969-12-01), Slavin
patent: 3657612 (1972-04-01), Wiedmann
patent: 3853644 (1974-12-01), Tarui et al.
patent: 3925120 (1975-12-01), Saida et al.
patent: 4005470 (1977-01-01), Tucci et al.
patent: 4035664 (1977-07-01), Berger et al.

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