Static information storage and retrieval – Associative memories – Ferroelectric cell
Patent
1987-09-01
1988-12-13
Fears, Terrell W.
Static information storage and retrieval
Associative memories
Ferroelectric cell
365 51, 365189, G11C 1500
Patent
active
047916060
ABSTRACT:
A CMOS dynamic content addressable memory (CAM), having N- and P-channel transistors aligned in stripes for high packing density. In a preferred embodiment, each cell has a four transistor XOR gate for comparing a stored data bit with a comparand bit. Packing density is improved by symmetrically arranging each pair of neighboring rows and each pair of neighboring columns. The device, being of CMOS construction, has an inherently low soft error rate.
REFERENCES:
patent: 4559618 (1985-12-01), Houseman et al.
Price Simon M.
Threewitt N. Bruce
Fears Terrell W.
Triad Semiconductors International BV
LandOfFree
High density CMOS dynamic CAM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High density CMOS dynamic CAM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density CMOS dynamic CAM cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2200957