Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2005-09-06
2005-09-06
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S213000, C257S071000
Reexamination Certificate
active
06940109
ABSTRACT:
A semiconductor device comprises two transistors where a gate electrode of one transistor and source or drain of another transistor are located in the same rail. A monolithic three dimensional array contains a plurality of such devices. The transistors in different levels of the array preferably have a different orientation.
REFERENCES:
patent: 3414892 (1968-12-01), McCormack et al.
patent: 3432827 (1969-03-01), Samo
patent: 3571809 (1971-03-01), Nelson
patent: 3573757 (1971-04-01), Adams
patent: 3576549 (1971-04-01), Hess
patent: 3582908 (1971-06-01), Koo
patent: 3629863 (1971-12-01), Neale
patent: 3634929 (1972-01-01), Yoshida et al.
patent: 3671948 (1972-06-01), Cassen et al.
patent: 3699543 (1972-10-01), Neale
patent: 3717852 (1973-02-01), Abbas et al.
patent: 3728695 (1973-04-01), Frohman-Bentchkowsky
patent: 3787822 (1974-01-01), Rioult
patent: 3846767 (1974-11-01), Cohen
patent: 3863231 (1975-01-01), Taylor
patent: 3877049 (1975-04-01), Buckley
patent: 3886577 (1975-05-01), Buckley
patent: 3922648 (1975-11-01), Buckley
patent: 3980505 (1976-09-01), Buckley
patent: 3990098 (1976-11-01), Mastrangelo
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4177475 (1979-12-01), Holmberg
patent: 4203123 (1980-05-01), Shanks
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.
patent: 4229757 (1980-10-01), Moussie
patent: 4272880 (1981-06-01), Pashley
patent: 4281397 (1981-07-01), Neal et al.
patent: 4419741 (1983-12-01), Stewart et al.
patent: 4420766 (1983-12-01), Kasten
patent: 4442507 (1984-04-01), Roesner
patent: 4489478 (1984-12-01), Sakurai
patent: 4494135 (1985-01-01), Moussie
patent: 4498226 (1985-02-01), Inoue et al.
patent: 4499557 (1985-02-01), Holmberg et al.
patent: 4507757 (1985-03-01), McElroy
patent: 4535424 (1985-08-01), Reid
patent: 4543594 (1985-09-01), Mohsen et al.
patent: 4569121 (1986-02-01), Lim et al.
patent: 4630096 (1986-12-01), Drye
patent: 4646266 (1987-02-01), Ovshinsky et al.
patent: 4672577 (1987-06-01), Hirose
patent: 4677742 (1987-07-01), Johnson
patent: 4710798 (1987-12-01), Marcantonio
patent: 4811082 (1989-03-01), Jacobs
patent: 4811114 (1989-03-01), Yamamoto et al.
patent: 4820657 (1989-04-01), Hughes et al.
patent: 4823181 (1989-04-01), Mohsen et al.
patent: 4855953 (1989-08-01), Tsukamoto et al.
patent: 4876220 (1989-10-01), Mohsen et al.
patent: 4881114 (1989-11-01), Mohsen et al.
patent: 4899205 (1990-02-01), Hamdy et al.
patent: 4922319 (1990-05-01), Fukushima
patent: 4943538 (1990-07-01), Mohsen et al.
patent: 5001539 (1991-03-01), Inoue et al.
patent: 5070383 (1991-12-01), Sinar et al.
patent: 5070384 (1991-12-01), McCollum et al.
patent: 5089862 (1992-02-01), Warner, Jr. et al.
patent: 5091762 (1992-02-01), Watanabe
patent: 5126290 (1992-06-01), Lowrey et al.
patent: 5160987 (1992-11-01), Pricer et al.
patent: 5191405 (1993-03-01), Tomita et al.
patent: 5202754 (1993-04-01), Bertin et al.
patent: 5233206 (1993-08-01), Lee et al.
patent: 5266912 (1993-11-01), Kledzik
patent: 5283468 (1994-02-01), Kondo et al.
patent: 5306935 (1994-04-01), Esquivel et al.
patent: 5311039 (1994-05-01), Kimura et al.
patent: 5334880 (1994-08-01), Abadeer et al.
patent: 5391518 (1995-02-01), Bhushan
patent: 5391907 (1995-02-01), Jang
patent: 5398200 (1995-03-01), Mazure et al.
patent: 5422435 (1995-06-01), Takiar et al.
patent: 5426566 (1995-06-01), Beilstein, Jr.
patent: 5427979 (1995-06-01), Chang
patent: 5434745 (1995-07-01), Shokrgozar et al.
patent: 5441907 (1995-08-01), Sung et al.
patent: 5453952 (1995-09-01), Okudaira
patent: 5455445 (1995-10-01), Kurtz et al.
patent: 5463244 (1995-10-01), De Araujo et al.
patent: 5468997 (1995-11-01), Imai et al.
patent: 5471090 (1995-11-01), Deutsch et al.
patent: 5481133 (1996-01-01), Hsu
patent: 5495398 (1996-02-01), Takiar et al.
patent: 5502289 (1996-03-01), Takiar et al.
patent: 5517038 (1996-05-01), Maeda et al.
patent: 5523622 (1996-06-01), Harada et al.
patent: 5523628 (1996-06-01), Williams et al.
patent: 5535156 (1996-07-01), Levy et al.
patent: 5536968 (1996-07-01), Crafts et al.
patent: 5552963 (1996-09-01), Burns
patent: 5561622 (1996-10-01), Bertin et al.
patent: 5581498 (1996-12-01), Ludwig et al.
patent: 5585675 (1996-12-01), Knopf
patent: 5612570 (1997-03-01), Eide et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5654220 (1997-08-01), Leedy
patent: 5675547 (1997-10-01), Koga
patent: 5693552 (1997-12-01), Hsu
patent: 5696031 (1997-12-01), Wark
patent: 5703747 (1997-12-01), Voldman et al.
patent: 5737259 (1998-04-01), Chang
patent: 5745407 (1998-04-01), Levy et al.
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: 5770483 (1998-06-01), Kadosh et al.
patent: 5776810 (1998-07-01), Guterman et al.
patent: 5780925 (1998-07-01), Cipolla et al.
patent: 5781031 (1998-07-01), Bertin et al.
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5801437 (1998-09-01), Burns
patent: 5831325 (1998-11-01), Zhang
patent: 5835396 (1998-11-01), Zhang
patent: 5838530 (1998-11-01), Zhang
patent: 5883409 (1999-03-01), Guterman et al.
patent: 5915167 (1999-06-01), Leedy
patent: 5969380 (1999-10-01), Syyedy
patent: 5976953 (1999-11-01), Zavracky et al.
patent: 5978258 (1999-11-01), Manning
patent: 5985693 (1999-11-01), Leedy
patent: 5991193 (1999-11-01), Gallagher et al.
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6057598 (2000-05-01), Payne et al.
patent: 6072234 (2000-06-01), Camien et al.
patent: 6087722 (2000-07-01), Lee et al.
patent: 6110278 (2000-08-01), Saxena
patent: 6130835 (2000-10-01), Scheuerlein
patent: 6133640 (2000-10-01), Leedy
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6197641 (2001-03-01), Hergenrother et al.
patent: 6208545 (2001-03-01), Leedy
patent: RE37259 (2001-07-01), Ovshinsky
patent: 6281042 (2001-08-01), Ahn et al.
patent: 6291858 (2001-09-01), Ma et al.
patent: 6307257 (2001-10-01), Huan et al.
patent: 6314013 (2001-11-01), Ahn et al.
patent: 6322903 (2001-11-01), Siniaguine et al.
patent: 6337521 (2002-01-01), Masuda
patent: 6351028 (2002-02-01), Akram
patent: 6353265 (2002-03-01), Michii
patent: 6355501 (2002-03-01), Fung et al.
patent: 6593624 (2003-07-01), Walker
patent: 2001/0033030 (2001-10-01), Leedy
patent: 2001/0054759 (2001-12-01), Nishiura
patent: 2001/0055838 (2001-12-01), Walker et al.
patent: 2002/0024146 (2002-02-01), Furusawa
patent: 2002/0027275 (2002-03-01), Fujimoto et al.
patent: 2002/0028541 (2002-03-01), Lee et al.
patent: 2002/0030263 (2002-03-01), Akram
patent: 2002/0030282 (2002-03-01), Akram
patent: 2002/0142546 (2002-10-01), Kouznetsov
patent: 2003/0030074 (2003-02-01), Walker et al.
patent: 2003/0057435 (2003-03-01), Walker
patent: 2003/0173643 (2003-09-01), Herner
patent: 0 073 486 (1982-08-01), None
patent: 0 387 834 (1990-09-01), None
patent: 0 395 886 (1990-11-01), None
patent: 0 516 866 (1992-12-01), None
patent: 0 606 653 (1994-07-01), None
patent: 0 644 548 (1994-09-01), None
patent: 0 800 137 (1997-03-01), None
patent: 61-222216 (1986-10-01), None
patent: 6-22352 (1994-01-01), None
patent: 63-52463 (1998-03-01), None
patent: WO 94/26083 (1994-11-01), None
patent: WO 02/15277 (2002-02-01), None
John H. Douglas: “The Route to 3-D Chips,” High Technology, Sep. 1983, pp. 55-59, vol. 3, No. 9, High Technology Publishing Corporation, Boston, MA.
M. Arienzo et al.: “Diffusion of Arsenic in Bilayer Polycrystalline Silicon Films,” J. Appl. Phys., Jan. 1984, pp. 365-369, vol. 55, No. 2, American Institute of Physics.
O. Bellezza et al.: “A New Self-Aligned Field Oxide Cell for Multimegabit Eproms,” IEDM, pp. 579-582, IEEE.
S.D. Brotherton et al.: “Excimer-Laser-Annealed Poly-Si Thin-Film Transistors,” IEEE Transactions on Electron Devices, Feb. 1993, pp. 407-413, vol. 40, No. 2, IEEE.
P. Candelier et al.: “Simplified 0.35-μm Flash EEPROM Process Using High-Temperature Oxide (HTO) Deposited by LPCVD as Interpoly Dielectrics and Peripheral Transistors Gate Oxide,” IEEE Electron Device Letters, Jul. 1997, pp. 306-308, vol. 18, No. 7, IEEE.
Min Cao et al.: “A High-Performance Polysilicon Thin-Film Tra
Ilkbahar Alper
Patel Kedar
Scheuerlein Roy
Walker Andrew J.
Matrix Semiconductor Inc.
Nelms David
Nguyen Thinh T
LandOfFree
High density 3d rail stack arrays and method of making does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High density 3d rail stack arrays and method of making, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High density 3d rail stack arrays and method of making will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3380376